标题: Temperature-dependent electron transport properties of AlGaN/GaN heterostructures
作者: Lee, CC
Shih, CF
Lee, CP
Tu, RC
Chuo, CC
Chi, J
电子工程学系及电子研究所
Department of Electronics Engineering and Institute of Electronics
关键字: GaN;transport property;heterostructure;modulation-doped;thermal activation
公开日期: 1-六月-2004
摘要: In this article, a comparison on the temperature dependence of the electron transport properties of the undoped and modulation-doped AlGaN/GaN heterostructures is presented. The results obtained indicate that the device structure plays an important role in the temperature-dependent transport behavior of the devices. The undoped structure has a nearly constant 2DEG concentration over a wide temperature range. The modulation-doped structure has a temperature-dependent electron concentration. The increase in electron concentration in the modulation-doped structure at high temperatures is due to the thermal activation of Si donors in the AlGaN layer. In addition, the modulation-doped structure shows comparable electron mobility with the undoped structure at high temperatures, indicating that the modulation-doped structure would exhibit a better device performance at high temperatures.
URI: http://dx.doi.org/10.1143/JJAP.43.L740
http://hdl.handle.net/11536/26706
ISSN: 0021-4922
DOI: 10.1143/JJAP.43.L740
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS
Volume: 43
Issue: 6A
起始页: L740
结束页: L742
显示于类别:Articles


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