完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Lin, YC | en_US |
dc.contributor.author | Shieh, HPD | en_US |
dc.date.accessioned | 2014-12-08T15:39:08Z | - |
dc.date.available | 2014-12-08T15:39:08Z | - |
dc.date.issued | 2004-06-01 | en_US |
dc.identifier.issn | 0018-9383 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/TED.2004.827371 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/26740 | - |
dc.description.abstract | A novel switched-current (SI) memory circuit with improved accuracy and operating frequency for active-matrix organic light-emitting displays (AMOLEDs) was developed. The proposed SI memory, constructed from current memory structure, can not only reduce the influence of charge-injection without using-larger storage capacitor, but also realize the significant amount of speed up by means of small storage capacitor. Furthermore, the capability of copying the current signal is achieved without relying on the matching of device characteristics. The proposed SI memory circuit was implemented by low temperature poly-silicon technology and is suitable for current driving scheme-based high-resolution AMOLED applications. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | active matrix | en_US |
dc.subject | active matrix organic light-emitting displays (AMOLEDs) | en_US |
dc.subject | current memory | en_US |
dc.subject | low temperature poly-silicon thin-film transistors (LTPS-TFT) | en_US |
dc.subject | organic light-emitting displays (OLEDs) | en_US |
dc.subject | switched current | en_US |
dc.title | A novel current memory circuit for AMOLEDs | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/TED.2004.827371 | en_US |
dc.identifier.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | en_US |
dc.citation.volume | 51 | en_US |
dc.citation.issue | 6 | en_US |
dc.citation.spage | 1037 | en_US |
dc.citation.epage | 1040 | en_US |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | Department of Photonics | en_US |
dc.identifier.wosnumber | WOS:000221660100030 | - |
dc.citation.woscount | 6 | - |
顯示於類別: | 期刊論文 |