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dc.contributor.authorLin, Chun-Yuen_US
dc.contributor.authorChu, Li-Weien_US
dc.contributor.authorKer, Ming-Douen_US
dc.contributor.authorLu, Tse-Huaen_US
dc.contributor.authorHung, Ping-Fangen_US
dc.contributor.authorLi, Hsiao-Chunen_US
dc.date.accessioned2014-12-08T15:39:08Z-
dc.date.available2014-12-08T15:39:08Z-
dc.date.issued2010en_US
dc.identifier.isbn978-1-4244-6241-4en_US
dc.identifier.issn1529-2517en_US
dc.identifier.urihttp://hdl.handle.net/11536/26743-
dc.identifier.urihttp://dx.doi.org/10.1109/RFIC.2010.5477291en_US
dc.description.abstractA self-matched ESD cell library has been implemented in a commercial sub-100nm CMOS process for 60-GHz broadband RF applications. This ESD cell library has reached the 50-Omega input/output matching to reduce the design complexity for RF circuit designer and to provide suitable electrostatic discharge (ESD) protection. Experimental results of this ESD cell library have successfully verified the ESD robustness and the RF characteristics in the 60-GHz frequency band. This self-matched ESD cell library is easily to be used for ESD protection design in the 60-GHz broadband RF applications.en_US
dc.language.isoen_USen_US
dc.subjectBroadbanden_US
dc.subjectelectrostatic discharge (ESD)en_US
dc.subjectESD cellen_US
dc.subjectV-banden_US
dc.subject60 GHzen_US
dc.titleSelf-Matched ESD Cell in CMOS Technology for 60-GHz Broadband RF Applicationsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/RFIC.2010.5477291en_US
dc.identifier.journal2010 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS RFIC SYMPOSIUMen_US
dc.citation.spage573en_US
dc.citation.epage576en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.identifier.wosnumberWOS:000287515700131-
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