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dc.contributor.authorHuang, SYen_US
dc.contributor.authorChen, KMen_US
dc.contributor.authorHuang, GWen_US
dc.contributor.authorTseng, HCen_US
dc.contributor.authorHsu, TLen_US
dc.contributor.authorChang, CYen_US
dc.contributor.authorHuang, TYen_US
dc.date.accessioned2014-12-08T15:39:08Z-
dc.date.available2014-12-08T15:39:08Z-
dc.date.issued2004-06-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2004.828589en_US
dc.identifier.urihttp://hdl.handle.net/11536/26747-
dc.description.abstractThis letter investigates hot-carrier (HQ effects on the power characteristics of Si-SiGe HBTs using load-pull measurements. We found that the output power, power gain, and linearity of Si-SiGe HBTs are degraded after HC stress. Under constant base-current measurement, the HC-induced power performance degradation is found to be much worse than that under constant collector-current measurement. The HC effects on the cutoff frequency, nonlinearity terms of base-current and collector-current, and third-order intermodulation (IM3) cancellation effect have been analyzed to explain the experimental observations.en_US
dc.language.isoen_USen_US
dc.subjecthot-carrier (HC) stressen_US
dc.subjectlinearityen_US
dc.subjectload-pull measurementen_US
dc.subjectpoweren_US
dc.subjectSiGeHBTen_US
dc.titleHot-carrier effects on power characteristics of SiGeHBTsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2004.828589en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume25en_US
dc.citation.issue6en_US
dc.citation.spage393en_US
dc.citation.epage395en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000221659700017-
dc.citation.woscount1-
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