标题: | Hot-carrier effects on power characteristics of SiGeHBTs |
作者: | Huang, SY Chen, KM Huang, GW Tseng, HC Hsu, TL Chang, CY Huang, TY 电子工程学系及电子研究所 Department of Electronics Engineering and Institute of Electronics |
关键字: | hot-carrier (HC) stress;linearity;load-pull measurement;power;SiGeHBT |
公开日期: | 1-六月-2004 |
摘要: | This letter investigates hot-carrier (HQ effects on the power characteristics of Si-SiGe HBTs using load-pull measurements. We found that the output power, power gain, and linearity of Si-SiGe HBTs are degraded after HC stress. Under constant base-current measurement, the HC-induced power performance degradation is found to be much worse than that under constant collector-current measurement. The HC effects on the cutoff frequency, nonlinearity terms of base-current and collector-current, and third-order intermodulation (IM3) cancellation effect have been analyzed to explain the experimental observations. |
URI: | http://dx.doi.org/10.1109/LED.2004.828589 http://hdl.handle.net/11536/26747 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2004.828589 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 25 |
Issue: | 6 |
起始页: | 393 |
结束页: | 395 |
显示于类别: | Articles |
文件中的档案:
If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.