Title: | Hot-carrier effects on power characteristics of SiGeHBTs |
Authors: | Huang, SY Chen, KM Huang, GW Tseng, HC Hsu, TL Chang, CY Huang, TY 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
Keywords: | hot-carrier (HC) stress;linearity;load-pull measurement;power;SiGeHBT |
Issue Date: | 1-Jun-2004 |
Abstract: | This letter investigates hot-carrier (HQ effects on the power characteristics of Si-SiGe HBTs using load-pull measurements. We found that the output power, power gain, and linearity of Si-SiGe HBTs are degraded after HC stress. Under constant base-current measurement, the HC-induced power performance degradation is found to be much worse than that under constant collector-current measurement. The HC effects on the cutoff frequency, nonlinearity terms of base-current and collector-current, and third-order intermodulation (IM3) cancellation effect have been analyzed to explain the experimental observations. |
URI: | http://dx.doi.org/10.1109/LED.2004.828589 http://hdl.handle.net/11536/26747 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2004.828589 |
Journal: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 25 |
Issue: | 6 |
Begin Page: | 393 |
End Page: | 395 |
Appears in Collections: | Articles |
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