标题: Impact of air filter material on metal oxide semiconductor (MOS) device characteristics in HF vapor environment
作者: Hsiao, CW
Lou, JC
Yeh, CF
Hsieh, CM
Lin, SJ
Kusumi, T
电子工程学系及电子研究所
Department of Electronics Engineering and Institute of Electronics
关键字: contamination;glass fiber filter;HF vapor;PTFE filter;trace doping
公开日期: 15-五月-2004
摘要: Airborne molecular contamination (AMC) is becoming increasingly important as devices are scaled down to the nanometer generation. Optimum ultra low penetration air (ULPA) filter technology can eliminate AMC. In a cleanroom, however, the acid vapor generated from the cleaning process may degrade the ULPA filter, releasing AMC to the air and the surface of wafers, degrading the electrical characteristics of devices. This work proposes the new PTFE ULPA filter, which is resistant to acid vapor corrosion, to solve this problem. Experimental results demonstrate that the PTFE ULPA filter can effectively eliminate the AMC and provide a very clean cleanroom environment.
URI: http://dx.doi.org/10.1143/JJAP.43.L659
http://hdl.handle.net/11536/26774
ISSN: 0021-4922
DOI: 10.1143/JJAP.43.L659
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS
Volume: 43
Issue: 5B
起始页: L659
结束页: L661
显示于类别:Articles


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