標題: | LOW-TEMPERATURE EPITAXIAL-GROWTH OF SILICON AND SILICON-GERMANIUM ALLOY BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION |
作者: | JUNG, TG CHANG, CY CHANG, TC LIN, HC WANG, T TSAI, WC HUANG, GW WANG, PJ 電控工程研究所 Institute of Electrical and Control Engineering |
關鍵字: | SI1-XGEX;LOW-TEMPERATURE EPITAXY;HYDROGEN PASSIVATION;STRAINED-LAYER SUPERLATTICES;BISTABLE EPITAXIAL GROWTH |
公開日期: | 1-Jan-1994 |
摘要: | Low-temperature epitaxy of silicon and silicon-germanium alloy via an ultrahigh-vacuum chemical vapor deposition system was investigated. Bistable conditions were observed for silicon epitaxial growth performed within the temperature range of 550 degrees C to 800 degrees C. The activation energy of the SiGe growth rate was found to decrease as the germanium composition increased. The germanium atomic molar fraction in these epitaxial layers was tightly controlled by a computer-controlled gas source switching system. Si/SiGe superlattice structures of 20-period 5 nm Si/12 nm SiGe layers were grown to demonstrate the excellent controllability of this growth technique. |
URI: | http://dx.doi.org/10.1143/JJAP.33.240 http://hdl.handle.net/11536/2677 |
ISSN: | 0021-4922 |
DOI: | 10.1143/JJAP.33.240 |
期刊: | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS |
Volume: | 33 |
Issue: | 1A |
起始頁: | 240 |
結束頁: | 246 |
Appears in Collections: | Articles |
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