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dc.contributor.authorLan, YCen_US
dc.contributor.authorLee, CTen_US
dc.contributor.authorHu, Yen_US
dc.contributor.authorChen, SHen_US
dc.contributor.authorLee, CCen_US
dc.contributor.authorTsui, BYen_US
dc.contributor.authorLin, TLen_US
dc.date.accessioned2014-12-08T15:39:16Z-
dc.date.available2014-12-08T15:39:16Z-
dc.date.issued2004-05-01en_US
dc.identifier.issn1071-1023en_US
dc.identifier.urihttp://hdl.handle.net/11536/26825-
dc.description.abstractRecently, two new CNTs-based triode structures, i.e., under-gate and planar-gate structures, for field emission display were proposed and exhibited good characteristics. In this paper, we will investigate how the current density distributed on anode plate and how the display's resolution affected by the bias conditions of the emitter and the gate electrode via computer simulation. Our simulation results exhibit that the gate voltage has a strong effect on display's resolution. For the planar triode structure, the good resolution is achieved when the gate voltage is adjusted to converge the electron beams on an anode plate. For the under-gate structure, the display has a good resolution provided that the gate voltage is not too large to pull the electrons striking on other pixels. In general, the under-gate structure has a wider gate-biased operating condition, but the planar triode structure has a higher light efficiency under the same resolution. Due to the lack of field effect in the y-direction, the spot size of the current density on anode plate looks like strips instead of points. And the resolution of the display will be affected by this factor. (C) 2004 American Vacuum Society.en_US
dc.language.isoen_USen_US
dc.titleSimulation study of carbon nanotube field emission display with under-gate and planar-gate structuresen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.journalJOURNAL OF VACUUM SCIENCE & TECHNOLOGY Ben_US
dc.citation.volume22en_US
dc.citation.issue3en_US
dc.citation.spage1244en_US
dc.citation.epage1249en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000222481400068-
Appears in Collections:Conferences Paper


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