Higher kappa Metal-Gate/High-kappa/Ge n-MOSFETs with < 1 nm EOT Using Laser Annealing

Abstract

High performance metal-gate/high-kappa/Ge n-MOSFETs are reached with low 73 Omega/sq sheet resistance (R(s)), 1.10 ideality factor, 0.95 nm EOT, small 106 mV/dec sub-threshold slope (SS), good 285 cm(2)/Vs high-field (1 MV/cm) mobility and low 37 mV Delta V(t) PBTI (85 degrees C, 1 hr). This is achieved by using 30-ns laser annealing that leads to 57% higher gate capacitance, better n(+)/p junction and 10X better I(ON)/I(OFF).