標題: Higher kappa Metal-Gate/High-kappa/Ge n-MOSFETs with < 1 nm EOT Using Laser Annealing
作者: Chen, W. B.
Shie, B. S.
Chin, Albert
Hsu, K. C.
Chi, C. C.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2010
摘要: High performance metal-gate/high-kappa/Ge n-MOSFETs are reached with low 73 Omega/sq sheet resistance (R(s)), 1.10 ideality factor, 0.95 nm EOT, small 106 mV/dec sub-threshold slope (SS), good 285 cm(2)/Vs high-field (1 MV/cm) mobility and low 37 mV Delta V(t) PBTI (85 degrees C, 1 hr). This is achieved by using 30-ns laser annealing that leads to 57% higher gate capacitance, better n(+)/p junction and 10X better I(ON)/I(OFF).
URI: http://hdl.handle.net/11536/26831
ISBN: 978-1-4244-7419-6
期刊: 2010 INTERNATIONAL ELECTRON DEVICES MEETING - TECHNICAL DIGEST
顯示於類別:會議論文