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dc.contributor.authorChen, W. B.en_US
dc.contributor.authorShie, B. S.en_US
dc.contributor.authorChin, Alberten_US
dc.contributor.authorHsu, K. C.en_US
dc.contributor.authorChi, C. C.en_US
dc.date.accessioned2014-12-08T15:39:17Z-
dc.date.available2014-12-08T15:39:17Z-
dc.date.issued2010en_US
dc.identifier.isbn978-1-4244-7419-6en_US
dc.identifier.urihttp://hdl.handle.net/11536/26831-
dc.description.abstractHigh performance metal-gate/high-kappa/Ge n-MOSFETs are reached with low 73 Omega/sq sheet resistance (R(s)), 1.10 ideality factor, 0.95 nm EOT, small 106 mV/dec sub-threshold slope (SS), good 285 cm(2)/Vs high-field (1 MV/cm) mobility and low 37 mV Delta V(t) PBTI (85 degrees C, 1 hr). This is achieved by using 30-ns laser annealing that leads to 57% higher gate capacitance, better n(+)/p junction and 10X better I(ON)/I(OFF).en_US
dc.language.isoen_USen_US
dc.titleHigher kappa Metal-Gate/High-kappa/Ge n-MOSFETs with < 1 nm EOT Using Laser Annealingen_US
dc.typeArticleen_US
dc.identifier.journal2010 INTERNATIONAL ELECTRON DEVICES MEETING - TECHNICAL DIGESTen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000287997300109-
Appears in Collections:Conferences Paper