Higher kappa Metal-Gate/High-kappa/Ge n-MOSFETs with < 1 nm EOT Using Laser Annealing

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DC Field	Value	Language
dc.contributor.author	Chen, W. B.	en_US
dc.contributor.author	Shie, B. S.	en_US
dc.contributor.author	Chin, Albert	en_US
dc.contributor.author	Hsu, K. C.	en_US
dc.contributor.author	Chi, C. C.	en_US
dc.date.accessioned	2014-12-08T15:39:17Z	-
dc.date.available	2014-12-08T15:39:17Z	-
dc.date.issued	2010	en_US
dc.identifier.isbn	978-1-4244-7419-6	en_US
dc.identifier.uri	http://hdl.handle.net/11536/26831	-
dc.description.abstract	High performance metal-gate/high-kappa/Ge n-MOSFETs are reached with low 73 Omega/sq sheet resistance (R(s)), 1.10 ideality factor, 0.95 nm EOT, small 106 mV/dec sub-threshold slope (SS), good 285 cm(2)/Vs high-field (1 MV/cm) mobility and low 37 mV Delta V(t) PBTI (85 degrees C, 1 hr). This is achieved by using 30-ns laser annealing that leads to 57% higher gate capacitance, better n(+)/p junction and 10X better I(ON)/I(OFF).	en_US
dc.language.iso	en_US	en_US
dc.title	Higher kappa Metal-Gate/High-kappa/Ge n-MOSFETs with < 1 nm EOT Using Laser Annealing	en_US
dc.type	Article	en_US
dc.identifier.journal	2010 INTERNATIONAL ELECTRON DEVICES MEETING - TECHNICAL DIGEST	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000287997300109	-
Appears in Collections:	Conferences Paper