標題: Influence of N2O plasma treatment on microstructure and thermal stability of WNx barriers for Cu interconnection
作者: Tsai, KC
Wu, WF
Chen, JC
Pan, TJ
Chao, CG
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 1-五月-2004
摘要: Thermal stabilities of Cu-contacted n(+)-p junctions with tungsten nitride (WNx) diffusion barriers deposited at various nitrogen flow ratios are investigated. N2O plasma treatment is applied to improve thermal stability and barrier performance of WNx film. Sheet resistance Of Cu/N2O plasma-treated WNx/Si is fairly stable even after annealing at 750degreesC for 30 min. Moreover, N2O plasma treatment enables the Cu/WNx/n(+)-p junction-diodes to sustain thermal annealing at 600 degreesC without electrical degradation. Auger electron spectroscopy depth profiles show that Cu diffusion through the N2O plasma-treated WNx barrier is extremely limited, even after annealing at 675 degreesC. Analyses of transmission electron microscopy and x-ray photoemission spectroscopy show that nitridation and oxidation on the WNx barrier occur and an amorphous layer is formed after N2O plasma treatment. (C) 2004 American Vacuum Society.
URI: http://hdl.handle.net/11536/26852
ISSN: 1071-1023
期刊: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Volume: 22
Issue: 3
起始頁: 993
結束頁: 999
顯示於類別:期刊論文


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