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dc.contributor.authorFang, THen_US
dc.contributor.authorJian, SRen_US
dc.contributor.authorChuu, DSen_US
dc.date.accessioned2014-12-08T15:39:19Z-
dc.date.available2014-12-08T15:39:19Z-
dc.date.issued2004-04-30en_US
dc.identifier.issn0169-4332en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.apsusc.2004.01.053en_US
dc.identifier.urihttp://hdl.handle.net/11536/26859-
dc.description.abstractTiC, TiN and TiCN thin films deposited on silicon (1 0 0) substrates using plasma enhanced chemical vapor deposition (PECVD) was investigated by scanning probe microscopy (SPM) and nanoindentation techniques. Results showed that the TiC film exhibits lower surface roughness and friction coefficient than the TiN and the TiCN films. Young's modulus and hardness both decreased as the indentation depth increased for all the films and the TiC film exhibited a higher hardness and Young's modulus. Additionally. the contact stress-strain relationships and fractal dimension were also analyzed. (C) 2004 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectSPMen_US
dc.subjectnanoindentationen_US
dc.subjectYoung's modulus hardnessen_US
dc.subjectfrictionen_US
dc.subjectfractal analysisen_US
dc.titleNanomechanical properties of TiC, TiN and TiCN thin films using scanning probe microscopy and nanoindentationen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.apsusc.2004.01.053en_US
dc.identifier.journalAPPLIED SURFACE SCIENCEen_US
dc.citation.volume228en_US
dc.citation.issue1-4en_US
dc.citation.spage365en_US
dc.citation.epage372en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000221367000050-
dc.citation.woscount39-
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