Highly-Scaled 3.6-nm ENT Trapping Layer MONOS Device with Good Retention and Endurance

Full metadata record

DC Field	Value	Language
dc.contributor.author	Tsai, C. Y.	en_US
dc.contributor.author	Lee, T. H.	en_US
dc.contributor.author	Chin, Albert	en_US
dc.contributor.author	Wang, Hong	en_US
dc.contributor.author	Cheng, C. H.	en_US
dc.contributor.author	Yeh, F. S.	en_US
dc.date.accessioned	2014-12-08T15:39:20Z	-
dc.date.available	2014-12-08T15:39:20Z	-
dc.date.issued	2010	en_US
dc.identifier.isbn	978-1-4244-7419-6	en_US
dc.identifier.uri	http://hdl.handle.net/11536/26865	-
dc.description.abstract	Novel MONOS CTF, with record thinnest 3.6 nm ENT trapping layer, has a large 3.1 V 10-year extrapolated retention window at 125 degrees C and excellent 10(6) endurance at a fast 100 mu s and +/- 16 V program/erase. This is achieved using an As(+)-implanted higher. trapping layer with deep 5.1 eV work-function of As. In contrast, the un-implanted device only has a small 10-year retention window of 1.9 V at 125 degrees C.	en_US
dc.language.iso	en_US	en_US
dc.title	Highly-Scaled 3.6-nm ENT Trapping Layer MONOS Device with Good Retention and Endurance	en_US
dc.type	Article	en_US
dc.identifier.journal	2010 INTERNATIONAL ELECTRON DEVICES MEETING - TECHNICAL DIGEST	en_US
dc.contributor.department	電機工程學系	zh_TW
dc.contributor.department	Department of Electrical and Computer Engineering	en_US
dc.identifier.wosnumber	WOS:000287997300026	-
Appears in Collections:	Conferences Paper