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dc.contributor.authorYu, HCen_US
dc.contributor.authorChang, SJen_US
dc.contributor.authorSu, YKen_US
dc.contributor.authorSung, CPen_US
dc.contributor.authorYang, HPen_US
dc.contributor.authorHuang, CYen_US
dc.contributor.authorLin, YWen_US
dc.contributor.authorWang, JMen_US
dc.contributor.authorLa, FIen_US
dc.contributor.authorKuo, HCen_US
dc.date.accessioned2014-12-08T15:39:22Z-
dc.date.available2014-12-08T15:39:22Z-
dc.date.issued2004-04-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.43.1947en_US
dc.identifier.urihttp://hdl.handle.net/11536/26894-
dc.description.abstractHigh-speed vertical-cavity surface-emitting lasers that could be modulated up to 10 Giga-bit-per-second (Gbps) were accomplished by using additional proton implantation to reduce the parasitic capacitance. The eye diagram of the implanted device shows a noticeable improvement when compared with those devices without implantation. In contrast to previous reports, moreover, the output power-current-voltage (L-I-V) characteristics of the fabricated devices ill this study show excellent consistency between before and after implantation. The high-temperature lifetime of devices fabricated with a similar process has already exceeded 8100 h up to the present day.en_US
dc.language.isoen_USen_US
dc.subjectVCSELen_US
dc.subjecthigh-speeden_US
dc.subjectoxide-confineden_US
dc.subjectproton implantationen_US
dc.subjecteye diagramen_US
dc.titleImprovement of high-speed oxide-confined vertical-cavity surface-emitting lasersen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1143/JJAP.43.1947en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERSen_US
dc.citation.volume43en_US
dc.citation.issue4Ben_US
dc.citation.spage1947en_US
dc.citation.epage1950en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000221510800063-
Appears in Collections:Conferences Paper


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