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dc.contributor.authorLin, CLen_US
dc.contributor.authorChen, CFen_US
dc.contributor.authorShi, SCen_US
dc.date.accessioned2014-12-08T15:39:24Z-
dc.date.available2014-12-08T15:39:24Z-
dc.date.issued2004-04-01en_US
dc.identifier.issn0925-9635en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.diamond.2003.10.056en_US
dc.identifier.urihttp://hdl.handle.net/11536/26911-
dc.description.abstractAligned carbon nanotubes (CNTs) were grown on stainless steel 304 by bias-enhanced microwave plasma chemical vapor deposition, using CH4/CO2 as the reactant gas. A bias was applied to the microwave plasma to grow the nanotubes over various periods. Experimental results show that well-aligned CNTs grow on stainless steel at a negative bias of - 300 V Energy dispersive spectrometer on TEM indicated that the metal catalyst on the top of the CNTs includes Fe and Ni, but not Cr. The field emission properties of the resultant CNTs were obtained at a negative bias of - 300 V: the emission current was 194 muA at 2.2 V/mum; and the turn-on voltage, which is the voltage needed to extract current density of 10 muA /cm(2), was 1.4 V/mum. (C) 2003 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectnanotubesen_US
dc.subjectplasma CVDen_US
dc.subjecthigh-resolution electron microscopyen_US
dc.subjectfield emissionen_US
dc.titleField emission properties of aligned carbon nanotubes grown on stainless steel using CH4/CO2 reactant gasen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/j.diamond.2003.10.056en_US
dc.identifier.journalDIAMOND AND RELATED MATERIALSen_US
dc.citation.volume13en_US
dc.citation.issue4-8en_US
dc.citation.spage1026en_US
dc.citation.epage1031en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000221691100094-
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