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dc.contributor.authorYang, JYen_US
dc.contributor.authorSuen, SCen_US
dc.contributor.authorWhang, WTen_US
dc.date.accessioned2014-12-08T15:39:26Z-
dc.date.available2014-12-08T15:39:26Z-
dc.date.issued2004-04-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.43.2366en_US
dc.identifier.urihttp://hdl.handle.net/11536/26923-
dc.description.abstractThe electrical characteristics of hydrogen-postannealed and hydrogen-plasma-treated pentacene thin film transistors (TFTs) have been investigated. Experimental results have shown that the hydrogen-treated TFTs have improved field-effect mobility and a higher current on/off ratio, compared to untreated devices. The on/off current ratio of the hydrogen-treated devices was markedly increased. However, the TFTs treated with hydrogen plasma have degraded field-effect mobility, compared to hydrogen-postannealed devices.en_US
dc.language.isoen_USen_US
dc.subjectpentacene thin film transistorsen_US
dc.subjecthydrogenen_US
dc.subjectplasmaen_US
dc.subjectfield-effect mobilityen_US
dc.subjecton/off current ratioen_US
dc.titleCharacterization of hydrogen-treated pentacene organic thin film transistorsen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1143/JJAP.43.2366en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERSen_US
dc.citation.volume43en_US
dc.citation.issue4Ben_US
dc.citation.spage2366en_US
dc.citation.epage2369en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000221510800157-
Appears in Collections:Conferences Paper


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