Characterization of hydrogen-treated pentacene organic thin film transistors

doi:10.1143/JJAP.43.2366

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Yang, JY	en_US
dc.contributor.author	Suen, SC	en_US
dc.contributor.author	Whang, WT	en_US
dc.date.accessioned	2014-12-08T15:39:26Z	-
dc.date.available	2014-12-08T15:39:26Z	-
dc.date.issued	2004-04-01	en_US
dc.identifier.issn	0021-4922	en_US
dc.identifier.uri	http://dx.doi.org/10.1143/JJAP.43.2366	en_US
dc.identifier.uri	http://hdl.handle.net/11536/26923	-
dc.description.abstract	The electrical characteristics of hydrogen-postannealed and hydrogen-plasma-treated pentacene thin film transistors (TFTs) have been investigated. Experimental results have shown that the hydrogen-treated TFTs have improved field-effect mobility and a higher current on/off ratio, compared to untreated devices. The on/off current ratio of the hydrogen-treated devices was markedly increased. However, the TFTs treated with hydrogen plasma have degraded field-effect mobility, compared to hydrogen-postannealed devices.	en_US
dc.language.iso	en_US	en_US
dc.subject	pentacene thin film transistors	en_US
dc.subject	hydrogen	en_US
dc.subject	plasma	en_US
dc.subject	field-effect mobility	en_US
dc.subject	on/off current ratio	en_US
dc.title	Characterization of hydrogen-treated pentacene organic thin film transistors	en_US
dc.type	Article; Proceedings Paper	en_US
dc.identifier.doi	10.1143/JJAP.43.2366	en_US
dc.identifier.journal	JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS	en_US
dc.citation.volume	43	en_US
dc.citation.issue	4B	en_US
dc.citation.spage	2366	en_US
dc.citation.epage	2369	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000221510800157	-
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