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dc.contributor.authorChen, CTen_US
dc.contributor.authorChiou, BSen_US
dc.date.accessioned2014-12-08T15:39:26Z-
dc.date.available2014-12-08T15:39:26Z-
dc.date.issued2004-04-01en_US
dc.identifier.issn0361-5235en_US
dc.identifier.urihttp://hdl.handle.net/11536/26925-
dc.description.abstractElectromigration (EM) damage is one of the major causes for the failure of interconnects. Plasma treatment, such as dry etching, is frequently employed in the fabrication of multilevel interconnection patterns. This work investigates the hydrogen silsesquioxane (HSQ) and copper integrated systems and the effect of H-2 plasma treatment on the EM of Cu. Hydrogen plasma bombardment induces a rough HSQ surface and results in a coarse morphology of the Cu film deposited on HSQ. The crystallographic texture of Cu is also affected by the plasma treatment. A decrease in the Cu I(111)/I(200) peak ratio is observed for a specimen treated with H-2 plasma. The activation energy for EM in Cu and the EM lifetime of the Cu interconnect decreases with an increased degree of plasma treatment. The activation energies obtained, ranging from 0.76 eV to 0.94 eV, suggest that the electromigration in copper proceeds via an interfacial diffusion path. Possible mechanisms for the effects of plasma treatment are explored. The rough surface and the retarded Cu (111) orientation induced by H-2 plasma bombardment are the major causes for the decrease of activation energy and EM lifetime.en_US
dc.language.isoen_USen_US
dc.subjectelectromigrationen_US
dc.subjectinterconnecten_US
dc.subjectplasma treatmenten_US
dc.subjectCu-low k dielectricen_US
dc.subjectreliabilityen_US
dc.subjecthydrogen silsesquioxaneen_US
dc.titleElectromigration in sputtered copper film on plasma-treated hydrogen silsesquioxane dielectricen_US
dc.typeArticleen_US
dc.identifier.journalJOURNAL OF ELECTRONIC MATERIALSen_US
dc.citation.volume33en_US
dc.citation.issue4en_US
dc.citation.spage368en_US
dc.citation.epage373en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000220810700016-
dc.citation.woscount3-
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