標題: Effect of rapid thermal annealing on beryllium implanted p-type GaN
作者: Huang, HW
Kao, CC
Tsai, JY
Yu, CC
Chu, CF
Lee, JY
Kuo, SY
Lin, CF
Kuo, HC
Wang, SC
光電工程學系
Department of Photonics
關鍵字: RTA;beryllium;implantation;GaN;SSA;MSA
公開日期: 25-Mar-2004
摘要: We report the results of rapid thermal annealing (RTA) effect on beryllium implanted in situ activated p-type GaN samples and investigate the ramping and isothermal annealing effect of RTA process for these samples. It is found that the optimum RTA condition is at the temperature of 1100 degreesC for 15 s. Furthermore, with equal total isothermal time of 60 s, we compared the multiple step annealing (MSA) at 1100 degreesC for four periods with single step annealing (SSA) for one period at the same annealing temperature of 1100 degreesC, and observed that the ramping effect with MSA could repair Be-related complex defect, and one time, long period isothermal annealing effect with SSA seems to induce much more defect. It seems that the multiple step annealing is more effective and induce less defect than single step annealing for Be-implanted in situ activated p-type GaN samples. (C) 2004 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.mseb.2003.12.001
http://hdl.handle.net/11536/26933
ISSN: 0921-5107
DOI: 10.1016/j.mseb.2003.12.001
期刊: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
Volume: 107
Issue: 3
起始頁: 237
結束頁: 240
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