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dc.contributor.authorDimitrov, Den_US
dc.contributor.authorShieh, HPDen_US
dc.date.accessioned2014-12-08T15:39:27Z-
dc.date.available2014-12-08T15:39:27Z-
dc.date.issued2004-03-15en_US
dc.identifier.issn0921-5107en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.mseb.2003.10.110en_US
dc.identifier.urihttp://hdl.handle.net/11536/26946-
dc.description.abstractNitrogen and oxygen doped and co-doped GeSbTe (GST) films for phase-change optical recording are investigated. It is found that the crystallization temperature increased as well as the crystalline microstructure refined by doping. The carrier-to-noise ratio (CNR) and erasability of phase-change optical disks are improved being up to 52 and 35 dB, respectively, by using an appropriate nitrogen doping or co-doping concentration in the recording layer. Optical disks with co-doped recording layer are found to be superior in the recording characteristics then the single doped recording layer disks. (C) 2003 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectoptical data storageen_US
dc.subjectphase-change mediaen_US
dc.subjectGeSbTeen_US
dc.titleThe influence of oxygen and nitrogen doping on GeSbTe phase-change optical recording media propertiesen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.mseb.2003.10.110en_US
dc.identifier.journalMATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGYen_US
dc.citation.volume107en_US
dc.citation.issue2en_US
dc.citation.spage107en_US
dc.citation.epage112en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000220274200001-
dc.citation.woscount15-
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