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dc.contributor.authorLuo, Cen_US
dc.contributor.authorReimann, Ken_US
dc.contributor.authorWoerner, Men_US
dc.contributor.authorElsaesser, Ten_US
dc.date.accessioned2014-12-08T15:39:30Z-
dc.date.available2014-12-08T15:39:30Z-
dc.date.issued2004-03-01en_US
dc.identifier.issn0947-8396en_US
dc.identifier.urihttp://dx.doi.org/10.1007/s00339-003-2400-5en_US
dc.identifier.urihttp://hdl.handle.net/11536/26964-
dc.description.abstractNonlinear frequency conversion and electro-optic sampling allow for the generation and phase-resolved characterization of few-cycle pulses in the frequency range up to 50 THz. Electric field transients with amplitudes of up to several MV/cm are applied to study coherent nonlinear excitations of low-dimensional semiconductors. We report the first observation of Rabi oscillations on intersubband transitions of electrons in GaAs/AlGaAs quantum wells. Frequency and phase of such oscillations are controlled in the 0.3- to 2.5-THz range via the strength and shape of the mid-infrared driving pulse.en_US
dc.language.isoen_USen_US
dc.titleNonlinear terahertz spectroscopy of semiconductor nanostructuresen_US
dc.typeArticleen_US
dc.identifier.doi10.1007/s00339-003-2400-5en_US
dc.identifier.journalAPPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSINGen_US
dc.citation.volume78en_US
dc.citation.issue4en_US
dc.citation.spage435en_US
dc.citation.epage440en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000188347700003-
dc.citation.woscount18-
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