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dc.contributor.authorHan, SRen_US
dc.contributor.authorFang, THen_US
dc.contributor.authorChuu, DSen_US
dc.date.accessioned2014-12-08T15:39:31Z-
dc.date.available2014-12-08T15:39:31Z-
dc.date.issued2004-03-01en_US
dc.identifier.issn0022-3093en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.jnoncrysol.2003.10.012en_US
dc.identifier.urihttp://hdl.handle.net/11536/26984-
dc.description.abstractNanomechanical properties of amorphous hydrogenated carbon thin films are performed by nanoindentation technique. The amorphous hydrogenated carbon films are produced on silicon substrate by electron cyclotron resonance microwave plasma chemical vapor deposition (ECR-MPCVD). The effect of negative bias voltage on amorphous hydrogenated carbon films is examined by Raman spectroscopy and the results showed that the intensity ratio of D-peak to G-peak (I-D/I-G) of amorphous hydrogenated carbon films at various bias voltages, increased as the bias voltage increased. The results also showed that Young's modulus and hardness also increased as the bias voltage increased. In addition, Young's modulus and hardness both decreased as the indentation depth increased. (C) 2003 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleNanoindentation investigation of amorphous hydrogenated carbon thin films deposited by ECR-MPCVDen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.jnoncrysol.2003.10.012en_US
dc.identifier.journalJOURNAL OF NON-CRYSTALLINE SOLIDSen_US
dc.citation.volume333en_US
dc.citation.issue3en_US
dc.citation.spage291en_US
dc.citation.epage295en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000188784600009-
dc.citation.woscount0-
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