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dc.contributor.authorChang, LCen_US
dc.contributor.authorChiou, BSen_US
dc.contributor.authorLee, WHen_US
dc.date.accessioned2014-12-08T15:39:33Z-
dc.date.available2014-12-08T15:39:33Z-
dc.date.issued2004-03-01en_US
dc.identifier.issn0957-4522en_US
dc.identifier.urihttp://dx.doi.org/10.1023/B:JMSE.0000011354.99189.b9en_US
dc.identifier.urihttp://hdl.handle.net/11536/26999-
dc.description.abstractThe effect of Al2O3-doped silica glass (AS-glass) addition on the structure and dielectric properties of the BaO-Nd2O3-Sm2O3-TiO2 (BNST) microwave materials was investigated. This BNST material has a dielectric constant (k) of 80 and a quality factor (Q x f) of 6000 GHz when sintered at 1350degreesC for 2 h. Both the microstructure and the microwave dielectric characteristics were determined as a function of the sintering temperature and glass content. A Q x fas high as 8700 GHz was achieved in ceramics added with 20 wt% glass, however, the k value drops to 30. The high Q x f value is attributed to the improved densification of the dielectric when glass is added. Results of X-ray diffraction experiments indicate that glass addition enhances the growth in the longitudinal direction of the columnar crystal and a preferred (002) orientation. The presence of columnar structure plays an important role in the improvement of the microwave dielectric properties. (C) 2004 Kluwer Academic Publishers.en_US
dc.language.isoen_USen_US
dc.titleEffect of glass additions on the sintering behaviors and electrical microwave properties of BaO-Nd2O3-Sm2O3-TiO2 ceramicsen_US
dc.typeArticleen_US
dc.identifier.doi10.1023/B:JMSE.0000011354.99189.b9en_US
dc.identifier.journalJOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICSen_US
dc.citation.volume15en_US
dc.citation.issue3en_US
dc.citation.spage153en_US
dc.citation.epage158en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000187939000005-
dc.citation.woscount10-
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