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dc.contributor.authorLu, TCen_US
dc.contributor.authorTsai, JYen_US
dc.contributor.authorKuo, HCen_US
dc.contributor.authorWang, SCen_US
dc.date.accessioned2014-12-08T15:39:35Z-
dc.date.available2014-12-08T15:39:35Z-
dc.date.issued2004-02-25en_US
dc.identifier.issn0921-5107en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.mseb.2003.10.067en_US
dc.identifier.urihttp://hdl.handle.net/11536/27017-
dc.description.abstractLong wavelength vertical cavity surface emitting lasers (VCSELs) are considered the best candidates for the low cost reliable light emitters in fiber communications. The low refractive index contrast in the conventional InP-based lattice-matched distributed Bragg reflectors (DBRs), InP/InGaAsP, impeded the development of 1.3-1.5 mum VCSELs. However, the monolithic InP-based lattice-matched DBRs are still most attractive and desirable. The InP/InGaAlAs and InAlAs/InGaAlAs DBRs with larger refractive index contrast than the conventional InP/InGaAsP DBRs have been demonstrated recently. In this report, we compare these two material systems in terms of optical and electrical properties of DBRs. We found the InP/InGaAlAs DBRs have better electrical and optical properties, while the InAlAs/InGaAlAs DBRs have much lower growth complexity. (C) 2003 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectmetalorganic chemical vapor depositionen_US
dc.subjectdistributed Bragg reflectorsen_US
dc.titleComparisons of InP/InGaAlAs and InAlAs/InGaAlAs distributed Bragg reflectors grown by metalorganic chemical vapor depositionen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.mseb.2003.10.067en_US
dc.identifier.journalMATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGYen_US
dc.citation.volume107en_US
dc.citation.issue1en_US
dc.citation.spage66en_US
dc.citation.epage69en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000220291100011-
dc.citation.woscount2-
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