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dc.contributor.authorHuang, HYen_US
dc.contributor.authorKu, CSen_US
dc.contributor.authorKe, WCen_US
dc.contributor.authorTang, NEen_US
dc.contributor.authorPeng, JMen_US
dc.contributor.authorChen, WKen_US
dc.contributor.authorChen, WHen_US
dc.contributor.authorLee, MCen_US
dc.contributor.authorLee, HYen_US
dc.date.accessioned2014-12-08T15:39:36Z-
dc.date.available2014-12-08T15:39:36Z-
dc.date.issued2004-02-15en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.1637952en_US
dc.identifier.urihttp://hdl.handle.net/11536/27025-
dc.description.abstractWe have studied optical properties of V-shaped pits on Al0.16Ga0.84N. The microphotoluminescence spectrum from the pit center shows a broader and stronger emission at 350 nm than the near-band-edge emission at 336 nm from nonpit regions. The results indicated specific defect levels associated with the V-shaped pits. Furthermore, after using atomic force microscopy to probe the surface electrical potential with a conductive tip, the pit's potential was similar to0.2 V lower than its surrounding region. A simplified energy diagram is tentatively proposed to interpret our observation. (C) 2004 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleSpatially-resolved photoluminescence studies of V-shaped pits on Al0.16Ga0.84Nen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.1637952en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume95en_US
dc.citation.issue4en_US
dc.citation.spage2172en_US
dc.citation.epage2174en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000188654100085-
dc.citation.woscount1-
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