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dc.contributor.authorChein, HMen_US
dc.contributor.authorChen, TMen_US
dc.contributor.authorAggarwal, SGen_US
dc.contributor.authorTsai, CJen_US
dc.contributor.authorHuang, CCen_US
dc.date.accessioned2014-12-08T15:39:37Z-
dc.date.available2014-12-08T15:39:37Z-
dc.date.issued2004-02-01en_US
dc.identifier.issn1047-3289en_US
dc.identifier.urihttp://hdl.handle.net/11536/27049-
dc.description.abstractA huge amount of inorganic acids can be produced and emitted with waste gases from integrated circuit manufacturing processes such as cleaning and etching. Emission of inorganic acids from selected semiconductor factories was measured in this study. The sampling of the inorganic acids was based on the porous metal denuders, and samples were then analyzed by ion chromatography. The amount of chemical usage was adopted from the data that were reported to the Environmental Protection Bureau in Hsin-chu County according to the Taiwan Environmental Protection Agency regulation. The emission factor is defined as the emission rate (kg/month) divided by the amount of chemical usage (L/month). Emission factors of three inorganic acids (i.e., hydrofluoric acid [HF], hydrochloric acid [HCl], and sulfuric acid [H2SO4]) were estimated by the same method. The emission factors of HF and HCl were determined to be 0.0075 kg/L (coefficient of variation [CV] = 60.7%, n = 80) and 0.0096 kg/L (CV = 68.2%, n = 91), respectively. Linear regression equations are proposed to fit the data with correlation coefficient square (R-2) = 0.82 and 0.9, respectively. The emission factor of H2SO4, which is in the droplet form, was determined to be 0.0016 kg/L (CV = 99.2%, n = 107), and its R-2 was 0.84. The emission profiles of gaseous inorganic acids show that HF is the dominant chemical in most of the fabricators.en_US
dc.language.isoen_USen_US
dc.titleInorganic acid emission factors of semiconductor manufacturing processesen_US
dc.typeArticleen_US
dc.identifier.journalJOURNAL OF THE AIR & WASTE MANAGEMENT ASSOCIATIONen_US
dc.citation.volume54en_US
dc.citation.issue2en_US
dc.citation.spage218en_US
dc.citation.epage228en_US
dc.contributor.department環境工程研究所zh_TW
dc.contributor.departmentInstitute of Environmental Engineeringen_US
dc.identifier.wosnumberWOS:000188547500010-
dc.citation.woscount7-
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