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dc.contributor.authorChiu, M. Y.en_US
dc.contributor.authorChang, F. Y.en_US
dc.contributor.authorChang, C. H.en_US
dc.contributor.authorTsai, M. A.en_US
dc.contributor.authorYu, Peichenen_US
dc.date.accessioned2014-12-08T15:39:37Z-
dc.date.available2014-12-08T15:39:37Z-
dc.date.issued2010en_US
dc.identifier.isbn978-1-4244-5891-2en_US
dc.identifier.issn0160-8371en_US
dc.identifier.urihttp://hdl.handle.net/11536/27053-
dc.description.abstractIn this work, we demonstrate a thorough device design, fabrication, characterization, and analysis of biomimetic antireflective structures implemented on a Ga(0.5)In(0.5)P/GaAs/Ge triple-junction solar cell. The sub-wavelength structures are fabricated on a silicon nitride passivation layer using polystyrene nanosphere lithography followed by anisotropic etching. Both the reflectance spectroscopy and external quantum efficiency measurements confirm the improved optical absorption in the ultraviolet/blue and near-infrared wavelengths. Hence, the conversion efficiency of cell with sub-wavelength structure (SWS) is enhanced by 46.1% and 3.4% due to much improved current-matching, compare to cells without an ARC and SL ARC, respectively. We further employ RCWA method to analyze the reflectance by tuning structural factors such as periodicity or height of the SWS.en_US
dc.language.isoen_USen_US
dc.titleBiomimetic Antireflection Coating for Efficiency Enhancement of Triple-Junction Solar Cells Utilizing Nanosphere Lithographyen_US
dc.typeArticleen_US
dc.identifier.journal35TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCEen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000287579500094-
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