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dc.contributor.authorLai, CLen_US
dc.contributor.authorLin, CHen_US
dc.contributor.authorChen, Cen_US
dc.date.accessioned2014-12-08T15:39:39Z-
dc.date.available2014-12-08T15:39:39Z-
dc.date.issued2004-02-01en_US
dc.identifier.issn0884-2914en_US
dc.identifier.urihttp://hdl.handle.net/11536/27080-
dc.description.abstractThe electromigration behavior of the composite solder composed of eutectic and high-lead SnPb was investioated with 5.7 x 10(4) A/cm(2) current stressing. Voids and hillocks were found only within the eutectic solder, and the high-lead solder remained intact. Electromigration was accelerated dramatically at 150 degreesC, and Pb became the major migration species of eutectic SnPb for the microstructure change at the anode. The polarity of the opposite current direction was also studied. When electrons drift from the eutectic side to the high-lead side, voids occurred at the eutectic-Cu interface whereas hillocks accumulated at the eutectic-high-lead interface. When the current was reversed, voids occurred at the eutectic-high-lead interface whereas hillocks accumulated at the eutectic-Cu interface. The anchoring effect, which results from the attaching of the lead-rich grains in the eutectic solder to the high-lead solder, was considered to retard the electromigration damage only in this current direction.en_US
dc.language.isoen_USen_US
dc.titleElectromigration at the high-Pb-eutectic SnPb solder interfaceen_US
dc.typeArticleen_US
dc.identifier.journalJOURNAL OF MATERIALS RESEARCHen_US
dc.citation.volume19en_US
dc.citation.issue2en_US
dc.citation.spage550en_US
dc.citation.epage556en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000222316200023-
dc.citation.woscount2-
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