ANGLE-RESOLVED REFLECTANCE SPECTROSCOPY OF PASSIVATED TRAPEZOID-CORN NANOSTRUCTURES FOR CRYSTALLINE SILICON PHOTOVOLTAICS

Abstract

In this work, we demonstrate an omnidirectional and broadband antireflective nanostructures incorporating a silicon nitrides (SiNx) passivation layer. The antireflective trapezoid-cone nanostructures are fabricated on a silicon wafer using polystyrene colloidal lithography with 550nm in height and then passivated with SiNx in different thicknesses to serve as the antireflection layer for silicon photovoltaics. The angle-resolved reflectance spectroscopy reveals that the trapezoid-cone nanostructures with an 80-nm-thick SiNx passivation layer effectively suppressed the Fresnel reflection over a broad spectral range and large angle of incidence (AOI). The AM1.5g weighted reflectance from 400 nm to 1000 nm is as low as 4.2% at normal incidence and <9.5% up to an AOI of 60 degrees, which is much superior to a conventional textured silicon substrate with passivation.