Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Tzeng, KL | en_US |
dc.contributor.author | Meng, HF | en_US |
dc.contributor.author | Tzeng, MF | en_US |
dc.contributor.author | Chen, YS | en_US |
dc.contributor.author | Liu, CH | en_US |
dc.contributor.author | Horng, SF | en_US |
dc.contributor.author | Yang, YZ | en_US |
dc.contributor.author | Chang, SM | en_US |
dc.contributor.author | Hsu, CS | en_US |
dc.contributor.author | Chi, CC | en_US |
dc.date.accessioned | 2014-12-08T15:39:44Z | - |
dc.date.available | 2014-12-08T15:39:44Z | - |
dc.date.issued | 2004-01-26 | en_US |
dc.identifier.issn | 0003-6951 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1063/1.1644322 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/27126 | - |
dc.description.abstract | A metal-oxide field-effect transistor (MOSFET) based on an electroluminescent conjugated polymer is fabricated on a glass substrate. It is found that the mobility horizontal to the substrate is two to three orders of magnitude larger than the mobility vertical to the substrate. The high horizontal mobility is attributed to the in-plane chain alignment in amorphous spin-coated films. We demonstrate an active pixel in which the light-emitting diode and the driving MOSFET share the same active polymer. (C) 2004 American Institute of Physics. | en_US |
dc.language.iso | en_US | en_US |
dc.title | One-polymer active pixel | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.1644322 | en_US |
dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
dc.citation.volume | 84 | en_US |
dc.citation.issue | 4 | en_US |
dc.citation.spage | 619 | en_US |
dc.citation.epage | 621 | en_US |
dc.contributor.department | 應用化學系 | zh_TW |
dc.contributor.department | 物理研究所 | zh_TW |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Applied Chemistry | en_US |
dc.contributor.department | Institute of Physics | en_US |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000188316500055 | - |
dc.citation.woscount | 22 | - |
Appears in Collections: | Articles |
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