1. 目前位置：

完整後設資料紀錄
DC 欄位值語言
dc.contributor.authorTzeng, KLen_US
dc.contributor.authorMeng, HFen_US
dc.contributor.authorTzeng, MFen_US
dc.contributor.authorChen, YSen_US
dc.contributor.authorLiu, CHen_US
dc.contributor.authorHorng, SFen_US
dc.contributor.authorYang, YZen_US
dc.contributor.authorChang, SMen_US
dc.contributor.authorHsu, CSen_US
dc.contributor.authorChi, CCen_US
dc.date.accessioned2014-12-08T15:39:44Z-
dc.date.available2014-12-08T15:39:44Z-
dc.date.issued2004-01-26en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.1644322en_US
dc.identifier.urihttp://hdl.handle.net/11536/27126-
dc.description.abstractA metal-oxide field-effect transistor (MOSFET) based on an electroluminescent conjugated polymer is fabricated on a glass substrate. It is found that the mobility horizontal to the substrate is two to three orders of magnitude larger than the mobility vertical to the substrate. The high horizontal mobility is attributed to the in-plane chain alignment in amorphous spin-coated films. We demonstrate an active pixel in which the light-emitting diode and the driving MOSFET share the same active polymer. (C) 2004 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleOne-polymer active pixelen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.1644322en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume84en_US
dc.citation.issue4en_US
dc.citation.spage619en_US
dc.citation.epage621en_US
dc.contributor.department應用化學系zh_TW
dc.contributor.department物理研究所zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.contributor.departmentInstitute of Physicsen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000188316500055-
dc.citation.woscount22-
顯示於類別：期刊論文


文件中的檔案：

  1. 000188316500055.pdf

若為 zip 檔案，請下載檔案解壓縮後，用瀏覽器開啟資料夾中的 index.html 瀏覽全文。

相關內容
Loading...