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dc.contributor.authorWang, H. W.en_US
dc.contributor.authorTsai, M. A.en_US
dc.contributor.authorChen, H. C.en_US
dc.contributor.authorTsai, Y. L.en_US
dc.contributor.authorTseng, P. C.en_US
dc.contributor.authorJang, C. Y.en_US
dc.contributor.authorYu, Peichenen_US
dc.contributor.authorKuo, H. C.en_US
dc.date.accessioned2014-12-08T15:39:44Z-
dc.date.available2014-12-08T15:39:44Z-
dc.date.issued2010en_US
dc.identifier.isbn978-1-4244-5891-2en_US
dc.identifier.issn0160-8371en_US
dc.identifier.urihttp://hdl.handle.net/11536/27131-
dc.description.abstractThe enhanced conversion efficiency of the InGaP/GaAs dual-junction solar cell was demonstrated antireflection nanorod arrays. After self-assembled Ni clusters, the nanorod arrays were fabricated by inductively-coupled-plasma reactive ion etching. The conversion efficiency were measured under one-sun air mass 1.5 global illuminations at room temperature. The short current of the nanorod arrays cell was enhanced 10.0% and the efficiency was enhanced 10.8%. We were also studied the light absorption efficiencies of the top InGaP and bottom GaAs cells under the influence of nanorod arrays. Surface nanorod arrays were not only as antireflection layers but also scattering sources. The nanorod arrays structure can be significant improved the maximum conversion efficiency.en_US
dc.language.isoen_USen_US
dc.titleEFFICIENCY ENHANCEMENT InGaP/GaAs DUAL-JUNCTION SOLAR CELL WITH SUB-WAVELENGTH ANTIREFLECTION NANOROD ARRAYSen_US
dc.typeArticleen_US
dc.identifier.journal35TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCEen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000287579502084-
Appears in Collections:Conferences Paper


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