EFFICIENCY ENHANCEMENT InGaP/GaAs DUAL-JUNCTION SOLAR CELL WITH SUB-WAVELENGTH ANTIREFLECTION NANOROD ARRAYS

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Wang, H. W.	en_US
dc.contributor.author	Tsai, M. A.	en_US
dc.contributor.author	Chen, H. C.	en_US
dc.contributor.author	Tsai, Y. L.	en_US
dc.contributor.author	Tseng, P. C.	en_US
dc.contributor.author	Jang, C. Y.	en_US
dc.contributor.author	Yu, Peichen	en_US
dc.contributor.author	Kuo, H. C.	en_US
dc.date.accessioned	2014-12-08T15:39:44Z	-
dc.date.available	2014-12-08T15:39:44Z	-
dc.date.issued	2010	en_US
dc.identifier.isbn	978-1-4244-5891-2	en_US
dc.identifier.issn	0160-8371	en_US
dc.identifier.uri	http://hdl.handle.net/11536/27131	-
dc.description.abstract	The enhanced conversion efficiency of the InGaP/GaAs dual-junction solar cell was demonstrated antireflection nanorod arrays. After self-assembled Ni clusters, the nanorod arrays were fabricated by inductively-coupled-plasma reactive ion etching. The conversion efficiency were measured under one-sun air mass 1.5 global illuminations at room temperature. The short current of the nanorod arrays cell was enhanced 10.0% and the efficiency was enhanced 10.8%. We were also studied the light absorption efficiencies of the top InGaP and bottom GaAs cells under the influence of nanorod arrays. Surface nanorod arrays were not only as antireflection layers but also scattering sources. The nanorod arrays structure can be significant improved the maximum conversion efficiency.	en_US
dc.language.iso	en_US	en_US
dc.title	EFFICIENCY ENHANCEMENT InGaP/GaAs DUAL-JUNCTION SOLAR CELL WITH SUB-WAVELENGTH ANTIREFLECTION NANOROD ARRAYS	en_US
dc.type	Article	en_US
dc.identifier.journal	35TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000287579502084	-
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