PL dependence of ZnO films grown on Si with various buffer layers by RF magnetron sputtering

doi:10.1149/1.1736594

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lin, CC	en_US
dc.contributor.author	Chen, SY	en_US
dc.contributor.author	Cheng, SY	en_US
dc.date.accessioned	2014-12-08T15:39:46Z	-
dc.date.available	2014-12-08T15:39:46Z	-
dc.date.issued	2004	en_US
dc.identifier.issn	1099-0062	en_US
dc.identifier.uri	http://hdl.handle.net/11536/27157	-
dc.identifier.uri	http://dx.doi.org/10.1149/1.1736594	en_US
dc.description.abstract	Peculiar photoluminescence (PL) emission properties of ZnO films on Si buffered with SiO2 and Si3N4 were found. The ZnO films deposited on SiO2/Si substrate show two double peaks in the room-temperature PL spectra, one double (374 and 394 nm) in the ultraviolet region and the other double (495 and 605 nm) located in the visible region. If the ZnO film was grown on Si3N4/Si, a very strong UV along with invisible deep-level emission was detected because the Si3N4 can effectively reduce the defect formation of oxygen vacancies and Zn interstitials compared to ZnO on SiO2/Si and Si. (C) 2004 The Electrochemical Society.	en_US
dc.language.iso	en_US	en_US
dc.title	PL dependence of ZnO films grown on Si with various buffer layers by RF magnetron sputtering	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1149/1.1736594	en_US
dc.identifier.journal	ELECTROCHEMICAL AND SOLID STATE LETTERS	en_US
dc.citation.volume	7	en_US
dc.citation.issue	7	en_US
dc.citation.spage	J20	en_US
dc.citation.epage	J22	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000221887600025	-
dc.citation.woscount	7	-
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