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dc.contributor.authorLIU, DCen_US
dc.contributor.authorLEE, CPen_US
dc.contributor.authorTSAI, KLen_US
dc.contributor.authorTSANG, JSen_US
dc.contributor.authorCHEN, HRen_US
dc.date.accessioned2014-12-08T15:04:13Z-
dc.date.available2014-12-08T15:04:13Z-
dc.date.issued1994-01-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.33.763en_US
dc.identifier.urihttp://hdl.handle.net/11536/2716-
dc.description.abstractBy fast change of the As-2 flux using a high temperature valved cracker, we have demonstrated the growth of strained InxGa1-xAs quantum wells with different compositions. The modulation of composition is due to the change in incorporation rates of the group III atoms under different As-2 fluxes. Photoluminescence (PL) emission from the quantum wells clearly indicates the change in composition. A change of In composition from 20.6% to 8.5%, has been achieved by changing the V/III beam-equivalent-pressure (BEP) ratio from 11.7 to 3.9. By this technique of composition modulation, we have fabricated strained InxGa1-xAs/GaAs single quantum well lasers with different emission wavelengths.en_US
dc.language.isoen_USen_US
dc.subjectCOMPOSITION MODULATIONen_US
dc.subjectCRACKERen_US
dc.subjectQUANTUM WELLSen_US
dc.subjectPHOTOLUMINESCENCEen_US
dc.subjectSEMICONDUCTOR LASERSen_US
dc.titleCOMPOSITION MODULATION OF INXGA1-XAS QUANTUM-WELLS BY FAST DIMER ARSENIC FLUX CHANGE USING VALVED ARSENIC CRACKERen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1143/JJAP.33.763en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERSen_US
dc.citation.volume33en_US
dc.citation.issue1Ben_US
dc.citation.spage763en_US
dc.citation.epage766en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1994MV67800082-
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