完整後設資料紀錄
DC 欄位語言
dc.contributor.authorCheng, HCen_US
dc.contributor.authorTsai, JWen_US
dc.contributor.authorHuang, CYen_US
dc.contributor.authorLuo, FCen_US
dc.contributor.authorTuan, HCen_US
dc.date.accessioned2014-12-08T15:01:25Z-
dc.date.available2014-12-08T15:01:25Z-
dc.date.issued1997-10-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://hdl.handle.net/11536/271-
dc.description.abstractThe instability characteristics of hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) with various interfacial and bulk defect states were systematically investigated. It was found that, under positive bias stresses; the threshold voltage shifts of a-Si:H TFT's with the same interfacial defect states but with different bulk defect states exhibited similar threshold voltage shift characteristics. In contrast, a-Si:H TFTs with different interfacial defect states but the same bulk defect states showed threshold voltage shifts proportional to the interfacial defect states under positive bias stresses. Furthermore, both the above kinds of a-Si:H TFT under positive bias stresses exhibited that the subthreshold swing shift characteristics closely related to both the interfacial and bulk defect states.en_US
dc.language.isoen_USen_US
dc.subjectamorphous siliconen_US
dc.subjectthin film transistoren_US
dc.subjectbias stressen_US
dc.subjectthreshold voltage shiften_US
dc.subjectsubthreshold swing shiften_US
dc.titleThe instability characteristics of amorphous silicon thin film transistors with various interfacial and bulk defect statesen_US
dc.typeArticleen_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERSen_US
dc.citation.volume36en_US
dc.citation.issue10en_US
dc.citation.spage6226en_US
dc.citation.epage6229en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
顯示於類別:期刊論文


文件中的檔案:

  1. A1997YJ90600012.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。