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dc.contributor.authorLin, CYen_US
dc.contributor.authorChin, Aen_US
dc.contributor.authorHou, YTen_US
dc.contributor.authorLi, MFen_US
dc.contributor.authorMcAlister, SPen_US
dc.contributor.authorKwong, DLen_US
dc.date.accessioned2014-12-08T15:39:51Z-
dc.date.available2014-12-08T15:39:51Z-
dc.date.issued2004-01-01en_US
dc.identifier.issn1041-1135en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LPT.2003.818922en_US
dc.identifier.urihttp://hdl.handle.net/11536/27237-
dc.description.abstractWe have fabricated Sn:In2O3 (ITO)-Al2O3 dielectric on Si1-xGex-Si metal-oxide-semiconductor tunnel diodes which emit light at around 1.3 mum, for x = 0.7. The emitted photon energy is smaller than the bandgap energy of Si, thus, avoiding strong light absorption by the Si substrate. The optical device structure is compatible with that of a metal-oxide-semiconductor field-effect transistor, since a conventional doped poly-Si gate electrode will be transparent to the emitted light. Increasing the Ge composition from 0.3 to 0.4 only slightly decreases the light-emitting efficiency.en_US
dc.language.isoen_USen_US
dc.subjectAl2O3en_US
dc.subjectelectroluminescenceen_US
dc.subjectlighten_US
dc.subjectlight-emitting device (LED)en_US
dc.subjectSiGeen_US
dc.titleLight emission near 1.3 mu m using ITO-Al2O3-Si0.3Ge0.7-Si tunnel diodesen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LPT.2003.818922en_US
dc.identifier.journalIEEE PHOTONICS TECHNOLOGY LETTERSen_US
dc.citation.volume16en_US
dc.citation.issue1en_US
dc.citation.spage36en_US
dc.citation.epage38en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000187885800012-
dc.citation.woscount6-
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