Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chiang, CC | en_US |
dc.contributor.author | Chen, CC | en_US |
dc.contributor.author | Li, LJ | en_US |
dc.contributor.author | Wu, ZC | en_US |
dc.contributor.author | Jang, SM | en_US |
dc.contributor.author | Liang, MS | en_US |
dc.date.accessioned | 2014-12-08T15:39:52Z | - |
dc.date.available | 2014-12-08T15:39:52Z | - |
dc.date.issued | 2004 | en_US |
dc.identifier.issn | 0013-4651 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/27246 | - |
dc.identifier.uri | http://dx.doi.org/10.1149/1.1778169 | en_US |
dc.description.abstract | This work investigates the thermal stability and physical and barrier properties for three species of amorphous silicon-oxycarbide (alpha-SiCO) dielectric barrier films, deposited by plasma-enhanced chemical vapor deposition (PECVD), to copper (Cu) diffusion using octamethylcyclotetrasiloxane precursor and helium (He) carrier gas with and without oxygen (O-2) reaction gas. The alpha-SiCO dielectric barrier film deposited by PECVD without O-2 reaction gas exhibits a low k-value of 2.8, thermally stable at temperatures up to 550 degreesC, excellent moisture resistance, and superb Cu barrier property until 400 degreesC. With the addition of O-2 reaction gas during the dielectric deposition process, the dielectric constant of the alpha-SiCO dielectric barrier films increases with increasing flow rate of O-2 reaction gas. Increasing flow rate of O-2 reaction gas during the deposition of the alpha-SiCO dielectric barrier films also degrades the thermal stability and moisture resistance of the dielectric barrier films. Moreover, the addition of O-2 reaction gas also results in a degraded Cu barrier property of dielectric films. (C) 2004 The Electrochemical Society. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Physical and barrier properties of amorphous silicon-oxycarbide deposited by PECVD from octamethylcyclotetrasiloxane | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1149/1.1778169 | en_US |
dc.identifier.journal | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | en_US |
dc.citation.volume | 151 | en_US |
dc.citation.issue | 9 | en_US |
dc.citation.spage | G612 | en_US |
dc.citation.epage | G617 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000223622000074 | - |
dc.citation.woscount | 13 | - |
Appears in Collections: | Articles |
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