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dc.contributor.authorChen, Min-Chenen_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorHuang, Sheng-Yaoen_US
dc.contributor.authorChang, Kuan-Changen_US
dc.contributor.authorHuang, Hui-Chunen_US
dc.contributor.authorChen, Shih-Chingen_US
dc.contributor.authorLu, Jinen_US
dc.contributor.authorGan, Der-Shinen_US
dc.contributor.authorHo, New-Jinen_US
dc.contributor.authorYoung, Tai-Faen_US
dc.contributor.authorJhang, Geng-Weien_US
dc.contributor.authorTai, Ya-Hsiangen_US
dc.date.accessioned2014-12-08T15:39:56Z-
dc.date.available2014-12-08T15:39:56Z-
dc.date.issued2009-12-25en_US
dc.identifier.issn0257-8972en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.surfcoat.2009.09.050en_US
dc.identifier.urihttp://hdl.handle.net/11536/27288-
dc.description.abstractin this paper, the supercritical CO(2) (SCCO(2)) fluid technology is successfully applied to improve the electrical characteristics of sputtered ZnO TFTs at low temperature (150 degrees C). After the treatment of SCCO(2) fluids mixed with water, the ZnO TFT exhibited superior transfer characteristics and lower threshold voltage. According to X-ray photoelectron spectroscopy (XPS) analyses, the improvements were attributed to the increase of binding energies of Zn-O bonds, hydrogen-related donors and the reduction of traps at the grain boundaries in ZnO thin films. In addition, the crystalline quality and microstructure of ZnO thin films were also investigated by using X-ray diffraction (XRD) and transmission electron microscopy (TEM). The transmittance of the ZnO film was measured by an N&K analyzer 1280 (N&K Technology, Inc.), which is a new type of thin-film measurement system. (C) 2009 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectZnOen_US
dc.subjectSupercritical fluiden_US
dc.titleImprovement of the performance of ZnO TFTs by low-temperature supercritical fluid technology treatmenten_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/j.surfcoat.2009.09.050en_US
dc.identifier.journalSURFACE & COATINGS TECHNOLOGYen_US
dc.citation.volume204en_US
dc.citation.issue6-7en_US
dc.citation.spage1112en_US
dc.citation.epage1115en_US
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentInstitute of Displayen_US
dc.identifier.wosnumberWOS:000272859500072-
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