Lateral superjunction reduced surface field structure for the optimization of breakdown and conduction characteristics, in a high-voltage lateral double diffused metal oxide field effect transistor

Abstract

Superjunction devices are reported to provide better high-voltage operation characteristics than conventional abrupt junction devices in silicon power applications. In this study, the superjunction reduced surface field (SJ-RESURF) lateral double diffused metal oxide semiconductor field effect transistor (LDMOSFET) is fabricated on a bulk silicon wafer to improve the operating characteristics of high-voltage devices. By introducing the p-type strips in the drift region, higher doping concentration of the drift region can be adopted to reduce the conduction resistance. The SJ-RESURF LDMOSFET with a specific on-resistance of 3.53 Omega(.)mm(2), a breakdown voltage of 335 V and a drift length of 30 mum, is demonstrated; its turn on-resistance is 25% better than that of the conventional structure. The turn-on resistance, breakdown behavior, device geometry, temperature, and charge balance mechanics of the SJ-RESURF LDMOSFET are examined herein.