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dc.contributor.authorDing, SJen_US
dc.contributor.authorHu, Hen_US
dc.contributor.authorLim, HFen_US
dc.contributor.authorKim, SJen_US
dc.contributor.authorYu, XFen_US
dc.contributor.authorZhu, CXen_US
dc.contributor.authorLi, MFen_US
dc.contributor.authorCho, BJen_US
dc.contributor.authorChan, DSHen_US
dc.contributor.authorRustagi, SCen_US
dc.contributor.authorYu, MBen_US
dc.contributor.authorChin, Aen_US
dc.contributor.authorKwong, DLen_US
dc.date.accessioned2014-12-08T15:40:03Z-
dc.date.available2014-12-08T15:40:03Z-
dc.date.issued2003-12-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2003.820664en_US
dc.identifier.urihttp://hdl.handle.net/11536/27357-
dc.description.abstractFor the first time, we successfully fabricated and demonstrated high performance metal-insulator-metal (MIM) capacitors with HfO2-Al2O3 laminate dielectric' using atomic im layer deposition (ALD) technique. Our data indicates that the laminate NUM capacitor can provide high capacitance density of 12.8 fF/ mum(2) from 10 kHz up to 20 GHz, very low leakage current of 3.2 x 10(-8) A/cm(2) at 3.3 V, small linear voltage coefficient of capacitance of 240 ppm/V together with quadratic. one of 1830 PPM/V-2, temperature coefficient of capacitance of 182 ppm/degreesC, and high breakdown field of similar to6 MV/cm as well as promising reliability. As a result, the HfO2-Al2O3 laminate is a very promising candidate for next generation MINI capacitor for radio frequency and mixed signal integrated circuit applications.en_US
dc.language.isoen_USen_US
dc.subjectatomic layer deposition (ALD)en_US
dc.subjectHfO2-Al2O3 laminateen_US
dc.subjecthigh-ken_US
dc.subjectmetal-insulator-metal (MIM) capacitoren_US
dc.titleHigh-performance MIM capacitor using ALD high-k HfO2-Al2O3 laminate dielectricsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2003.820664en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume24en_US
dc.citation.issue12en_US
dc.citation.spage730en_US
dc.citation.epage732en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000187845800003-
dc.citation.woscount33-
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