NOVEL FABRICATION TECHNIQUE TOWARDS QUANTUM DOTS

Full metadata record

DC Field	Value	Language
dc.contributor.author	LIU, DC	en_US
dc.contributor.author	LEE, CP	en_US
dc.date.accessioned	2014-12-08T15:04:14Z	-
dc.date.available	2014-12-08T15:04:14Z	-
dc.date.issued	1993-12-20	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.110133	en_US
dc.identifier.uri	http://hdl.handle.net/11536/2739	-
dc.description.abstract	A novel technique for semiconductor quantum dots fabrication is demonstrated. Using the technique of thermal etching or thermal evaporation during molecular beam epitaxial growth with a built-in evaporation mask, semiconductor quantum dots were obtained in a single growth run.	en_US
dc.language.iso	en_US	en_US
dc.title	NOVEL FABRICATION TECHNIQUE TOWARDS QUANTUM DOTS	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.110133	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	63	en_US
dc.citation.issue	25	en_US
dc.citation.spage	3503	en_US
dc.citation.epage	3505	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1993MM44800036	-
dc.citation.woscount	15	-
Appears in Collections:	Articles