Full metadata record
DC FieldValueLanguage
dc.contributor.authorLIU, DCen_US
dc.contributor.authorLEE, CPen_US
dc.date.accessioned2014-12-08T15:04:14Z-
dc.date.available2014-12-08T15:04:14Z-
dc.date.issued1993-12-20en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.110133en_US
dc.identifier.urihttp://hdl.handle.net/11536/2739-
dc.description.abstractA novel technique for semiconductor quantum dots fabrication is demonstrated. Using the technique of thermal etching or thermal evaporation during molecular beam epitaxial growth with a built-in evaporation mask, semiconductor quantum dots were obtained in a single growth run.en_US
dc.language.isoen_USen_US
dc.titleNOVEL FABRICATION TECHNIQUE TOWARDS QUANTUM DOTSen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.110133en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume63en_US
dc.citation.issue25en_US
dc.citation.spage3503en_US
dc.citation.epage3505en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1993MM44800036-
dc.citation.woscount15-
Appears in Collections:Articles