標題: The electrochemical behavior of tin-doped indium oxide during reduction in 0.3 M hydrochloric acid
作者: Huang, CA
Li, KC
Tu, GC
Wang, WS
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: tin-doped indium oxide;voltammetric scanning;reduction product;In-Sn particle;FESEM;EDS
公開日期: 30-十月-2003
摘要: The electrochemical behavior of tin-doped indium oxide (ITO) on SiO2 in 0.3 M HCl was studied using voltammetric scanning method. The result showed that an obvious reduction current peak occurred during the first cathodic potential scanning. The reduction reaction became less active after annealing ITO at 500 C for 1 h. The result was attributed to the replenishment of oxygen-deficient site, which acts as current carrier, by the annealing treatment. Many spherical In-Sn particles with sizes about 100-500 nm were formed on the ITO surface adjacent to the grain boundary when the reduction current took place. The In-Sn particles initiated preferentially on the ITO surface near grain boundaries attending the dissolution of ITO grain boundary. In the scanning period, after completion of the reduction current peak, reduction of hydrogen ions occurred in more negative potential region. A schematic illustration for the formation mechanism of the In-Sn reduction particle was postulated based on the metallographical and electrochemical results in this work. (C) 2003 Elsevier Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/S0013-4686(03)00480-8
http://hdl.handle.net/11536/27446
ISSN: 0013-4686
DOI: 10.1016/S0013-4686(03)00480-8
期刊: ELECTROCHIMICA ACTA
Volume: 48
Issue: 24
起始頁: 3599
結束頁: 3605
顯示於類別:期刊論文


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