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dc.contributor.authorHsueh, THen_US
dc.contributor.authorKuo, HCen_US
dc.contributor.authorLai, FIen_US
dc.contributor.authorLaih, LHen_US
dc.contributor.authorWang, SCen_US
dc.date.accessioned2014-12-08T15:40:12Z-
dc.date.available2014-12-08T15:40:12Z-
dc.date.issued2003-10-16en_US
dc.identifier.issn0013-5194en_US
dc.identifier.urihttp://dx.doi.org/10.1049/el:20030982en_US
dc.identifier.urihttp://hdl.handle.net/11536/27456-
dc.description.abstractThe single transverse mode operation of VCSELs with low threshold current (I-th) of 1.5 mA, slope efficiencies about 0.35 W/A, high optical output power of 3.8 mW and speed performance of 10 Gbit/s is reported. The laser has continuous-wave operation and employs oxygen implantation, MOCVD regrowth and selective oxidation on semi-insulating GaAs substrate.en_US
dc.language.isoen_USen_US
dc.titleHigh-speed characteristics of large-area single-transverse-mode vertical-cavity surface-emitting lasersen_US
dc.typeArticleen_US
dc.identifier.doi10.1049/el:20030982en_US
dc.identifier.journalELECTRONICS LETTERSen_US
dc.citation.volume39en_US
dc.citation.issue21en_US
dc.citation.spage1519en_US
dc.citation.epage1521en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000186228000025-
dc.citation.woscount14-
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