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dc.contributor.authorLin, CHen_US
dc.contributor.authorChang, HLen_US
dc.contributor.authorHsu, CMen_US
dc.contributor.authorLo, AYen_US
dc.contributor.authorKuo, CTen_US
dc.date.accessioned2014-12-08T15:40:17Z-
dc.date.available2014-12-08T15:40:17Z-
dc.date.issued2003-10-01en_US
dc.identifier.issn0925-9635en_US
dc.identifier.urihttp://dx.doi.org/10.1016/S0925-9635(03)00209-7en_US
dc.identifier.urihttp://hdl.handle.net/11536/27506-
dc.description.abstractTo examine the role of nitrogen, Co- and Ni-coated substrates were pretreated with three different gas compositions to compare the pretreated catalyst surfaces; the Fe, Co and Ni foils were subjected to carbon nanotube (CNT) growth experiments with CH4/H-2 and CH4/N-2 as source gases; the catalyst pretreatment plus the CNT growth experiments on Co- and Ni-coated Si substrates were carried out using both microwave plasma chemical vapor deposition and electron cyclotron resonance chemical vapor deposition (ECR-CVD) under different nitrogen-containing gases. The results show that the role of nitrogen may be summarized as follows: by comparing with hydrogen plasma, the bombardment energy of nitrogen plasma is greater. Therefore, the presence of nitrogen during CNT growth can keep the front catalyst surface clean and active to prolong surface passivation to enhance carbon bulk diffusion. The higher temperature due to higher bombardment energy of nitrogen plasma can promote agglomeration effects during catalyst pretreatment and the initial stage of CNT growth to produce larger size nano-particles. The presence of nitrogen is a favorable condition for formation of the bamboo-like CNTs, but not a necessary condition. Another favorable condition for formation of the bamboo-like CNTs is to deposit CNTs by ECR-CVD. (C) 2003 Elsevier Science B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectnitrogenen_US
dc.subjectformation mechanismen_US
dc.subjectbamboo-like nanotubesen_US
dc.subjectchemical vapor depositionen_US
dc.titleThe role of nitrogen in carbon nanotube formationen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/S0925-9635(03)00209-7en_US
dc.identifier.journalDIAMOND AND RELATED MATERIALSen_US
dc.citation.volume12en_US
dc.citation.issue10-11en_US
dc.citation.spage1851en_US
dc.citation.epage1857en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000187427300042-
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