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dc.contributor.authorChen, Kuang Yaoen_US
dc.contributor.authorLiang, C. -T.en_US
dc.contributor.authorAoki, N.en_US
dc.contributor.authorOchiai, Y.en_US
dc.contributor.authorCheng, K. A.en_US
dc.contributor.authorLin, Li-Hungen_US
dc.contributor.authorHuang, C. F.en_US
dc.contributor.authorLi, Yu-Ruen_US
dc.contributor.authorTseng, Yen Shungen_US
dc.contributor.authorYang, Chun-Kaien_US
dc.contributor.authorLin, Po-Tsunen_US
dc.contributor.authorWu, Jau-Yangen_US
dc.contributor.authorLin, Sheng-Dien_US
dc.date.accessioned2014-12-08T15:40:22Z-
dc.date.available2014-12-08T15:40:22Z-
dc.date.issued2009-07-01en_US
dc.identifier.issn0374-4884en_US
dc.identifier.urihttp://dx.doi.org/10.3938/jkps.55.64en_US
dc.identifier.urihttp://hdl.handle.net/11536/27565-
dc.description.abstractWe report a magneto-transport study on the two-dimensional electron system (2DES) in an AlGaAs/GaAs heterostructure. The direct insulator to quantum Hall conductor transition is observed at low temperatures by increasing the magnetic field B perpendicular to the 2DES. We can also observe the transition by varying the current I and find a relation T(e) similar to I(a) between electron effective temperature T(e) and current. Here, a denotes the exponent for the power law. The exponent a, however, can have different values on the two sides of the transition point, which indicates different inelastic scattering mechanisms in the low-field insulator and in the quantum Hall conductor.en_US
dc.language.isoen_USen_US
dc.subjectInsulator-quantum Hall transitionen_US
dc.subjectCurrent heatingen_US
dc.subjectTwo-dimensional electron systemen_US
dc.titleProbing Insulator-quantum Hall Transitions by Current Heatingen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.3938/jkps.55.64en_US
dc.identifier.journalJOURNAL OF THE KOREAN PHYSICAL SOCIETYen_US
dc.citation.volume55en_US
dc.citation.issue1en_US
dc.citation.spage64en_US
dc.citation.epage67en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000268023600015-
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