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dc.contributor.authorTsai, CLen_US
dc.contributor.authorChen, CFen_US
dc.date.accessioned2014-12-08T15:40:25Z-
dc.date.available2014-12-08T15:40:25Z-
dc.date.issued2003-09-01en_US
dc.identifier.issn0925-9635en_US
dc.identifier.urihttp://dx.doi.org/10.1016/S0925-9635(03)00247-4en_US
dc.identifier.urihttp://hdl.handle.net/11536/27591-
dc.description.abstractIn this study, we focus on the immediately improving quality of growing carbon nanotubes without any pre- or post-treatment. The applied biases during the reaction can directly control the diameter and the quality of carbon nanotubes. This simple step skips additional treatments and is easily used in many deposition systems. The diameter of carbon nanotubes noticeably varies from 45 nm without any amorphous carbon (under + 80 V) to 120 nm (under - 120 V). Raman spectrums indicate that I-D/I-G ratio decreases with increasing positive bias. This implies applying positive bias could enhance the graphitization of carbon nanotubes. However, positive and negative bias effects slightly vary the field emission enhancement. In addition, carbon nanotubes grown under positive bias possess better field emission characterization. This results from the following reasons: (I) smaller diameter- (II) pure surface; (III) more graphitized structure; and (IV) higher field enhancement beta. (C) 2003 Elsevier Science B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectbias-effecten_US
dc.subjectcarbon nanotubesen_US
dc.subjectRaman spectrumen_US
dc.subjectscanning electron microscopyen_US
dc.titleCharacterization of bias-controlled carbon nanotubesen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/S0925-9635(03)00247-4en_US
dc.identifier.journalDIAMOND AND RELATED MATERIALSen_US
dc.citation.volume12en_US
dc.citation.issue9en_US
dc.citation.spage1615en_US
dc.citation.epage1620en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000185308900028-
dc.citation.woscount14-
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