Improved Gettering Efficiency of Ni from Nickel-Mediated Crystallization Silicon Using Phosphorus-Doped Amorphous Silicon

doi:10.1007/s11664-009-0750-2

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DC 欄位	值	語言
dc.contributor.author	Wang, Bau-Ming	en_US
dc.contributor.author	Wu, Yewchung Sermon	en_US
dc.date.accessioned	2014-12-08T15:40:26Z	-
dc.date.available	2014-12-08T15:40:26Z	-
dc.date.issued	2009-06-01	en_US
dc.identifier.issn	0361-5235	en_US
dc.identifier.uri	http://dx.doi.org/10.1007/s11664-009-0750-2	en_US
dc.identifier.uri	http://hdl.handle.net/11536/27598	-
dc.description.abstract	Ni-metal-induced lateral crystallization (NILC) has been utilized to fabricate polycrystalline silicon thin-film transistors. However, the NILC process often leads to Ni and NiSi(2) precipitates being trapped. In this study, two kinds of films were used as gettering layers: (1) amorphous Si and (2) phosphorus-doped amorphous Si. After annealing at 550A degrees C for 12 h, it was found that phosphorous dopant did improve the gettering efficiency of amorphous Si.	en_US
dc.language.iso	en_US	en_US
dc.subject	Ni gettering	en_US
dc.subject	phosphorus dopant	en_US
dc.subject	chemical oxide (chem-SiO(2))	en_US
dc.title	Improved Gettering Efficiency of Ni from Nickel-Mediated Crystallization Silicon Using Phosphorus-Doped Amorphous Silicon	en_US
dc.type	Article; Proceedings Paper	en_US
dc.identifier.doi	10.1007/s11664-009-0750-2	en_US
dc.identifier.journal	JOURNAL OF ELECTRONIC MATERIALS	en_US
dc.citation.volume	38	en_US
dc.citation.issue	6	en_US
dc.citation.spage	767	en_US
dc.citation.epage	771	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000267031600010	-
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