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dc.contributor.authorLi, Yimingen_US
dc.contributor.authorLo, Hsiang-Yuen_US
dc.date.accessioned2014-12-08T15:40:27Z-
dc.date.available2014-12-08T15:40:27Z-
dc.date.issued2009-05-01en_US
dc.identifier.issn1533-4880en_US
dc.identifier.urihttp://dx.doi.org/10.1166/jnn.2009.VC04en_US
dc.identifier.urihttp://hdl.handle.net/11536/27621-
dc.description.abstractIn this work, we explore the optimal size of nanogaps for the high field emission (FE) efficiency. In the FE process, the emission current is highly dependent upon both the material properties and the shape of the emitter. Thus, we first calibrate the theoretical model with the experimental data using the numerical simulation which is developed to evaluate the FE efficiency under different conditions. A three-dimensional finite-difference time-domain particle-in-cell method which approaches to self-consistent simulation of the electromagnetic fields and charged particles is adopted to simulate the electron emission in the surface-conduction electron-emitter display (SED) device. Examinations into conducting characteristics, FE efficiency, local electric fields around the emitter, and current density on the anode plate with one surface conduction electron-emitter (SCE) are conducted. It is found that the optimal width of nanogap in the SCE is about 80 similar to 90 nm and optimal thickness of the emitter is 30 nm to obtain the highest FE efficiency. This study benefits the advanced SED design for a new type of electron sources.en_US
dc.language.isoen_USen_US
dc.subjectNanogapen_US
dc.subjectPalladiumen_US
dc.subjectSurface Conduction Electron Emitteren_US
dc.subjectField Emissionen_US
dc.subjectDisplayen_US
dc.subjectStructure Effecten_US
dc.subjectMaxwell's Equationsen_US
dc.subjectFowler-Nordheim Equationen_US
dc.subjectFDTD-PICen_US
dc.titleEmission Efficiency Dependence on the Width and Thickness of Nanogaps in Surface-Conduction Electron-Emitter Displaysen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1166/jnn.2009.VC04en_US
dc.identifier.journalJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGYen_US
dc.citation.volume9en_US
dc.citation.issue5en_US
dc.citation.spage3271en_US
dc.citation.epage3277en_US
dc.contributor.department電信工程研究所zh_TW
dc.contributor.departmentInstitute of Communications Engineeringen_US
dc.identifier.wosnumberWOS:000265186800072-
Appears in Collections:Conferences Paper