完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Ting, CC | en_US |
dc.contributor.author | Chen, SY | en_US |
dc.contributor.author | Lee, HY | en_US |
dc.date.accessioned | 2014-12-08T15:40:30Z | - |
dc.date.available | 2014-12-08T15:40:30Z | - |
dc.date.issued | 2003-08-01 | en_US |
dc.identifier.issn | 0021-8979 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1063/1.1590411 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/27649 | - |
dc.description.abstract | Er3+-Yb3+ codoped TiO2 films were prepared on fused silica by sol-gel processes. The Yb3+ codoping effect on the physical characteristics and similar to1.54 mum photoluminescence (PL) properties of Er3+-doped TiO2 films was investigated. Maximum similar to1.54 mum PL intensity occurs in Er3+ (5 mol %)-Yb-3+ (30 mol %) codoped TiO2 samples annealed at 700degreesC. However, when the concentration of Yb3+ ions is more than 30 mol %, the back energy transfer effect from Er3+ to Yb3+ will deteriorate the similar to1.54 mum PL efficiency. Extended x-ray absorption fine structure measurements show that the average spatial distance between Er3+ ions is slightly decreased due to the partial substitution of Yb3+ for Er3+ ions in the local structure. The Yb3+ ion in the Er3+-Yb3+ codoped TiO2 samples not only plays the role of disperser but is also a sensitizer of the Er3+ ion. This dual effect leads to larger PL intensity in the Er3+-Yb3+ codoped TiO2 system in comparison with Er3+-Y3+ codoped TiO2 samples. Compared with SiO2 films with Er3+ (5 mol%)-Yb3+ (30 mol %) codoped and annealed at optimal temperature of 985degreesC, the Er3+ -Yb3+ codoped TiO2 film obtains better PL properties at lower annealing temperature. (C) 2003 American Institute of Physics. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Physical characteristics and infrared fluorescence properties of sol-gel derived Er3+-Yb3+ codoped TiO2 | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.1590411 | en_US |
dc.identifier.journal | JOURNAL OF APPLIED PHYSICS | en_US |
dc.citation.volume | 94 | en_US |
dc.citation.issue | 3 | en_US |
dc.citation.spage | 2102 | en_US |
dc.citation.epage | 2109 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.identifier.wosnumber | WOS:000184400400121 | - |
dc.citation.woscount | 21 | - |
顯示於類別: | 期刊論文 |